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Published in 2020 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/abce2c
Abstract: In this work, a detailed numerical simulation is carried out to model the current–voltage characteristics of a nickel/β-Ga2O3 Schottky barrier diode at different temperatures. These SBDs are produced using confined magnetic-field-based sputtering to deposit the…
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Keywords:
schottky barrier;
ga2o3 schottky;
diode;
barrier diode ... See more keywords
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Published in 2019 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/40/2/022804
Abstract: Thermal annealing effects on gamma irradiated Ni/4H-SiC Schottky barrier diode (SBD) characteristics are analyzed over a wide range of temperatures (400–1100 °C). The annealing induced variations in the concentration of deep level traps in the…
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Keywords:
sic schottky;
schottky barrier;
barrier diode;
gamma irradiated ... See more keywords
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Published in 2022 at "Materials"
DOI: 10.3390/ma15238280
Abstract: In this article, we reported on a Ga2O3-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga2O3 drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping. The…
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Keywords:
diode;
diode heterojunction;
schottky barrier;
heterojunction diode ... See more keywords
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Published in 2019 at "Micromachines"
DOI: 10.3390/mi10020091
Abstract: In this paper, an AlGaN/GaN Schottky barrier diode (SBD) with the T-anode located deep into the bottom buffer layer in combination with field plates (TAI-BBF FPs SBD) is proposed. The electrical characteristics of the proposed…
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Keywords:
schottky barrier;
deep bottom;
gan schottky;
algan gan ... See more keywords