Numerical analysis of the reverse blocking enhancement in High-K passivation AlGaN/GaN Schottky barrier diodes with gated edge termination
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.12.026
Abstract: Abstract We conducted a numerical analysis on high-K dielectric passivated AlGaN/GaN Schottky barrier diodes (HPG-SBDs) with a gated edge termination (GET). The reverse blocking characteristics were significantly enhanced without the stimulation of any parasitic effect… read more here.
Keywords: schottky barrier; gated edge; gan schottky; numerical analysis ... See more keywords
2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5012866
Abstract: This letter reports lateral GaN-on-Si power Schottky barrier diodes (SBDs) with unprecedented voltage-blocking performance by integrating 3-dimensionally a hybrid of tri-anode and slanted tri-gate architectures in their anode. The hybrid tri-anode pins the voltage drop… read more here.
Keywords: schottky barrier; tri gate; barrier diodes; slanted tri ... See more keywords
GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates
Sign Up to like & getrecommendations! Published in 2019 at "AIP Advances"
DOI: 10.1063/1.5087491
Abstract: Vertical Schottky barrier diodes (SBD) with different drift-layer thicknesses (DLT) of GaN up to 30 μm grown by metalorganic chemical vapour deposition (MOCVD) were fabricated on free-standing GaN grown by hydride vapour phase epitaxy (HVPE).… read more here.
Keywords: schottky barrier; free standing; barrier diodes; drift layer ... See more keywords
Low-frequency noise in β-(AlxGa1−x)2O3 Schottky barrier diodes
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0153495
Abstract: We report on the low-frequency electronic noise in β-(AlxGa1−x)2O3 Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate current levels (f is… read more here.
Keywords: schottky barrier; frequency; noise; barrier diodes ... See more keywords
Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2020.3014133
Abstract: Vertical GaN Schottky barrier diodes (SBDs) with floating metal rings (FMRs) as edge termination structures have been fabricated on bulk GaN substrates. Devices with different FMR geometries were investigated including various numbers of rings and… read more here.
Keywords: metal; gan schottky; floating metal; schottky barrier ... See more keywords
3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.3005934
Abstract: This work demonstrates five-channel AlGaN/ GaN Schottky barrier diodes (SBDs) fabricated on a 4-inch wafer with a sheet resistance of $115~\Omega $ /sq. A novel edge termination based on regrown p-GaN is proposed to manage… read more here.
Keywords: algan gan; gan schottky; multi channel; schottky barrier ... See more keywords
Reliability Assessment of AlGaN/GaN Schottky Barrier Diodes Under ON-State Stress
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2020.2969638
Abstract: This article aims to study the degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge Termination (GET) under ON-state stress conditions. After all the stress experiments a recoverable behavior is observed, which indicates charge… read more here.
Keywords: state stress; stress; barrier diodes; schottky barrier ... See more keywords
Design Guidelines and Performance Tradeoffs in Recessed AlGaN/GaN Schottky Barrier Diodes
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3024354
Abstract: Critical design parameters for AlGaN/GaN Schottky barrier diodes (SBDs) are analyzed in this work using TCAD computations and detailed experiments. A comprehensive TCAD-based computational modeling approach is developed for GaN-based SBD. Breakdown mechanisms in SBD… read more here.
Keywords: algan gan; performance; gan schottky; schottky barrier ... See more keywords
Ultra-compact, High-Frequency Power Integrated Circuits Based on GaN-on-Si Schottky Barrier Diodes
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2020.3008226
Abstract: Gallium nitride (GaN) transistors are being employed in an increasing number of applications thanks to their excellent performance and competitive price. Yet, GaN diodes are not commercially available, and little is known about their performance… read more here.
Keywords: power integrated; performance; integrated circuits; power ... See more keywords
Synthesis of Peripherally Tetrasubstituted Phthalocyanines and Their Applications in Schottky Barrier Diodes
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Chemistry"
DOI: 10.1155/2017/9715069
Abstract: New metal-free and metallophthalocyanine compounds (Zn, Co, Ni, and Cu) were synthesized using 2-hydroxymethyl-1,4-benzodioxan and 4-nitrophthalonitrile compounds. All newly synthesized compounds were characterized by elemental analysis, FT-IR, UV-Vis, 1H-NMR, MALDI-TOF MS, and GC-MS techniques. The… read more here.
Keywords: schottky barrier; peripherally tetrasubstituted; charge transport; barrier diodes ... See more keywords
Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes
Sign Up to like & getrecommendations! Published in 2023 at "Materials"
DOI: 10.3390/ma16062202
Abstract: We report on the effects of large-area 4H-SiC Schottky barrier diodes on the radiation response to ionizing particles. Two different diode areas were compared: 1 mm × 1 mm and 5 mm × 5 mm.… read more here.
Keywords: schottky barrier; radiation response; barrier diodes; area ... See more keywords