Internal quantum efficiency enhancement employing composition-graded last quantum barrier and electron blocking layer
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DOI: 10.1117/1.jpe.10.024505
Abstract: Abstract. We reduce the problem of asymmetrical distribution of carriers (electrons and holes) by engineering the last barrier and electron blocking layer (EBL) of green indium gallium nitride (InGaN)-based multiquantum well light-emitting diodes. We employ… read more here.
Keywords: electron blocking; blocking layer; last quantum; barrier electron ... See more keywords