Suppression of hot electron effect in AlGaN/GaN HEMT with multi-grooves barrier-etched structure
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DOI: 10.1088/2053-1591/acd2aa
Abstract: A multi-grooves barrier-etched structure between barrier layer and passivation layer is proposed in this paper to suppress the hot electron effect at the gate edge on the drain side in the p-GaN gate AlGaN/GaN high-electron-mobility… read more here.
Keywords: grooves barrier; barrier etched; structure; multi grooves ... See more keywords