Temperature effects on the electrical characteristics of $$\mathrm{Al}/\mathrm{PTh}-\mathrm{SiO}_{2}/\mathrm{p\hbox {-}Si}$$Al/PTh-SiO2/p-Si structure
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DOI: 10.1007/s12034-017-1509-7
Abstract: The temperature-dependent current–voltage ($$I\text {--}V$$I--V) and capacitance–voltage ($$C\text {--}V$$C--V) characteristics of the fabricated Al/p-Si Schottky diodes with the polythiopene–SiO$$_{2}$$2 nanocomposite ($$\hbox {PTh--SiO}_{2}$$PTh--SiO2) interlayer were investigated. The ideality factor of $$\hbox {Al}/\hbox {PTh--SiO}_{2}/{p}\text {-Si}$$Al/PTh--SiO2/p-Si Schottky diodes… read more here.
Keywords: pth; barrier height; temperature; hbox pth ... See more keywords
Temperature dependence of electrical properties in $$\hbox {In/Cu}_{{2}}\hbox {ZnSnTe}_{{4}}\hbox {/Si/Ag diodes}$$In/Cu2ZnSnTe4/Si/Ag diodes
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DOI: 10.1007/s12034-018-1713-0
Abstract: Abstract$$\hbox {Cu}_{{2}}\hbox {ZnSnTe}_{4}$$Cu2ZnSnTe4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. The variation… read more here.
Keywords: barrier height; hbox znsnte; hbox hbox; temperature ... See more keywords
Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures
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DOI: 10.1007/s12648-016-0949-z
Abstract: In this study, Au/0.07 graphene-doped PVA/n-Si structures were fabricated and current conduction mechanism in these structures were investigated in the temperature range of 80–380 K through forward bias current–voltage (I–V) measurements. Main electrical parameters were extracted… read more here.
Keywords: barrier height; pva structures; ideality factor; doped pva ... See more keywords
Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation
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DOI: 10.1016/j.apsusc.2017.02.189
Abstract: Abstract The effect of electron beam irradiation (EBI) on Al/n-Si Schottky diode has been studied by I–V characterization at room temperature. The behavior of the metal-semiconductor (MS) interface is analyzed by means of variations in… read more here.
Keywords: schottky barrier; barrier height; beam irradiation; electron beam ... See more keywords
Intrinsic inhomogeneous barrier height at the n-TiO2/p-Si hole-blocking junction
Sign Up to like & getrecommendations! Published in 2018 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.10.001
Abstract: Abstract Using Kelvin probe force microscopy (KPFM) and temperature-dependent current-voltage characteristics, we study the charge transport across an n-TiO2/p-Si heterojunction. In particular, the KPFM result shows a variation in the work function at the TiO2… read more here.
Keywords: inhomogeneous barrier; hole blocking; barrier; barrier height ... See more keywords
Direct determination of the barrier height of Au ohmic-contact on a hydrogen-terminated diamond (001) surface
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DOI: 10.1016/j.diamond.2016.09.015
Abstract: Abstract The barrier height ϕ B of Au ohmic-contact on hydrogen-terminated p-type surface conductive layer (SCL) made on a boron-doped diamond (001) substrate has been directly determined by X-ray photoelectron spectroscopy (XPS). For this purpose,… read more here.
Keywords: barrier height; ohmic contact; diamond; contact ... See more keywords
Tunable resistive switching of vertical ReSe2/graphene hetero-structure enabled by Schottky barrier height and DUV light
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2020.157310
Abstract: Abstract The development of the novel three-terminal hybrid lateral memristor and transistor device called memtransistor, has successfully provided additional functionalities in memory devices. However, their high operating voltage is critical. In this report, we have… read more here.
Keywords: diselenide graphene; barrier height; graphene; light ... See more keywords
Improved rectification characteristics by engineering energy barrier height in TiOx-based RRAM
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DOI: 10.1016/j.mee.2020.111498
Abstract: Abstract Resistive random access memory (RRAM) is a strong candidate for next-generation memory. Despite its versatility, the sneak path current severely threatens accurate read operations, preventing RRAM from being expanded to high density array. To… read more here.
Keywords: tiox devices; rectification; barrier height; energy barrier ... See more keywords
Investigation of Schottky barrier height using area as parameter: Effect of hydrogen peroxide treatment on electrical optical properties of Schottky diode
Sign Up to like & getrecommendations! Published in 2021 at "Optical Materials"
DOI: 10.1016/j.optmat.2021.111341
Abstract: Abstract RF sputtered 25 nm ZnO thin film surface treated with H2O2 has produced the Schottky diodes of improved electrical and optical properties. The enhancement is associated with adsorbed and introduced oxygen at the film's surface… read more here.
Keywords: barrier height; surface; treatment; optical properties ... See more keywords
Optimizing wind barrier and photovoltaic array configuration in soiling mitigation
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DOI: 10.1016/j.renene.2020.08.155
Abstract: Abstract This study investigated the impact of wind barriers and installation configuration on soiling of photovoltaic arrays. Soiling parameters including wind speed, tilt angles and dust particle sizes were investigated. Computational fluid dynamics was used… read more here.
Keywords: barrier; configuration soiling; barrier height; photovoltaic array ... See more keywords
Theoretical analysis of doping concentration, layer thickness and barrier height effects on BaSi2 based homojunction solar cells toward high efficiency
Sign Up to like & getrecommendations! Published in 2020 at "Solar Energy"
DOI: 10.1016/j.solener.2020.03.056
Abstract: Abstract Numerical calculation and theoretical study on high optical absorption material BaSi2 based np or nip homojunction solar cells were conducted by using AMPS software. The effects of doping concentration and front layer thickness on… read more here.
Keywords: barrier height; layer; basi2; basi2 based ... See more keywords