Insight Into Ni/4H-SiC Schottky Barrier Inhomogeneity at Microscale Level
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2929827
Abstract: Ni/4H-SiC Schottky barrier diodes (SBDs) are fabricated and then annealed at different annealing temperatures to explore the Schottky barrier inhomogeneity (SBI). The macro- and microelectrical properties of SBDs are characterized by current–voltage ( ${I}$ –… read more here.
Keywords: sic schottky; barrier inhomogeneity; barrier; inline formula ... See more keywords