Effect of H 2 addition during PECVD on the moisture barrier property and environmental stability of H:SiN x film
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DOI: 10.1111/jace.18000
Abstract: A hydrogenated silicon nitride (H:SiNx) film with enhanced moisture barrier property and environmental stability was developed using plasma-enhanced chemical vapor deposition (PECVD) with the addition of H2 gas at 100 °C. The moisture barrier property… read more here.
Keywords: moisture barrier; sinx film; environmental stability; barrier property ... See more keywords