Investigation of avalanche ruggedness of 650 V Schottky-barrier rectifiers
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DOI: 10.1016/j.sse.2018.07.011
Abstract: Abstract Avalanche breakdown of novel 650 V SiC Schottky-barrier rectifiers is investigated. The rectifier diode has low leakage current for the temperatures up to 300 °C. Thermal coefficient of avalanche breakdown increases with the temperature to around… read more here.
Keywords: schottky barrier; avalanche; avalanche breakdown; barrier rectifiers ... See more keywords