Tunable Schottky barrier width and enormously enhanced photoresponsivity in Sb doped SnS2 monolayer
Sign Up to like & getrecommendations! Published in 2018 at "Nano Research"
DOI: 10.1007/s12274-018-2243-1
Abstract: Doping, which is the intentional introduction of impurities into a material, can improve the metal-semiconductor interface by reducing Schottky barrier width. Here, we present high-quality two-dimensional SnS2 nanosheets with well-controlled Sb doping concentration via direct… read more here.
Keywords: sns2 monolayer; schottky barrier; doped sns2; barrier width ... See more keywords
Controlling Drain Side Tunneling Barrier Width in Electrically Doped PNPN Tunnel FET
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DOI: 10.3390/mi14020301
Abstract: In this paper, we propose and investigate an electrically doped (ED) PNPN tunnel field effect transistor (FET), in which the drain side tunneling barrier width is effectively controlled to obtain a suppressed ambipolar current. We… read more here.
Keywords: drain side; fet; barrier width; pnpn tunnel ... See more keywords