Electrical contact barriers between 3D metal and layered SnS2.
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DOI: 10.1021/acsami.9b21996
Abstract: Field-effect transistors derived from traditional 3D semiconductors are rapidly approaching their fundamental limits. Layered semiconducting materials have emerged as promising candidates to replace restrictive 3D semiconductor materials. However, contacts between metals and layered materials deviate… read more here.
Keywords: sns2; contact barriers; electrical contact; barriers metal ... See more keywords