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Published in 2025 at "Journal of Materials Chemistry C"
DOI: 10.1039/d4tc04545a
Abstract: Aluminium scandium nitride appears as a promising material for future wide band gap semiconductor devices, due to its large spontaneous polarisation effects. Extensive annealing experiments with regard to time and...
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Keywords:
organised ordering;
self organised;
basal monolayers;
scandium basal ... See more keywords