HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector
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DOI: 10.1134/s1064226920030122
Abstract: Abstract Matrix photosensitive elements based on a HgCdTe semiconductor solid solution on silicon substrates with 640 × 512 elements at a pitch of 25 μm with a long-wavelength sensitivity of 5 μm at half maximum… read more here.
Keywords: 640 512; photodetector; based 640; 512 elements ... See more keywords