Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%
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DOI: 10.1070/qel16365
Abstract: The results of the development and fabrication of laser diode bars (λ = 800 – 810 nm) based on AlGaAs/GaAs quantum-well heterostructures with a high efficiency are presented. An increase in the internal quantum and… read more here.
Keywords: based algaas; diode; gaas quantum; laser diode ... See more keywords