Environmental factors controlled resistive switching memory behavior based on BiFeO3/Cu2ZnSnSe4 heterojunction
Sign Up to like & getrecommendations! Published in 2019 at "Results in Physics"
DOI: 10.1016/j.rinp.2019.102308
Abstract: Abstract With the memory device is required to be widely used in more complex environment, the exploration of new memory device have become a focus of research. Herein, a resistive switching memory device based on… read more here.
Keywords: based bifeo3; switching memory; memory; resistive switching ... See more keywords
Surface and Electrical Characterization of Bilayers Based on BiFeO3 and VO2
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12152578
Abstract: Thin films of BiFeO3, VO2, and BiFeO3/VO2 were grown on SrTiO3(100) and Al2O3(0001) monocrystalline substrates using radio frequency and direct current sputtering techniques. To observe the effect of the coupling between these materials, the surface… read more here.
Keywords: bifeo3 vo2; spectroscopy; bilayers based; based bifeo3 ... See more keywords