Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH3NH3PbBr3 films
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DOI: 10.1134/s1063783417120034
Abstract: Field-effect transistor (FET) structures based on soluble organometallic perovskites, CH3NH3PbBr3, were obtained and their electrical properties were studied. FETs made of CH3NH3PbBr3 films possess current- voltage characteristics (IVs) typical for ambipolar FETs with saturation regime.… read more here.
Keywords: transfer characteristics; ch3nh3pbbr3 films; mobility; based ch3nh3pbbr3 ... See more keywords