Integration, BEOL, and Thermal Stress Impact on CMOS-Compatible Titanium-Based Contacts for III–V Devices on a 300-mm Platform
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DOI: 10.1109/ted.2020.2985766
Abstract: Titanium-based contacts are envisioned for the integration of III–V device contacts on a 300-mm platform, such as photodetectors, semiconductor optical amplifiers (SOAs), and III–V silicon hybrid lasers. For the first time, the impact of the… read more here.
Keywords: titanium based; based contacts; integration; thermal stress ... See more keywords
Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers
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DOI: 10.1364/prj.391075
Abstract: The electrical and structural properties of V/Al-based n-contacts on n‐AlxGa1−xN with an Al mole fraction x ranging from x=0.75 to x=0.95 are investigated. Ohmic n-contacts are obtained up to x=0.75 with a contact resistivity of… read more here.
Keywords: high mole; mole fraction; properties microstructure; based contacts ... See more keywords