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Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202205055
Abstract: The first experimental realization of the intrinsic (not dominated by defects) charge conduction regime in lead‐halide perovskite field‐effect transistors (FETs) is reported. The advance is enabled by: i) a new vapor‐phase epitaxy technique that results…
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Keywords:
transistors based;
trap free;
based epitaxial;
intrinsic trap ... See more keywords
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0
Published in 2018 at "CrystEngComm"
DOI: 10.1039/c8ce00882e
Abstract: Bi2Te3 is deposited by hot wall epitaxy in an attempt to form nanosheets on epitaxially-grown ferromagnetic layers of Fe, Fe3Si and Co2FeSi. Bi2Te3 reacts strongly with pure Fe, producing FeTe2. The reaction is suppressed for…
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Keywords:
overgrowth bi2te3;
nanoislands based;
fe3si co2fesi;
ferromagnetic layers ... See more keywords
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2
Published in 2023 at "Materials"
DOI: 10.3390/ma16051848
Abstract: This work was dedicated to the development of novel types of composite phosphor converters of white LED, based on the epitaxial structures containing Y3Al5O12:Ce (YAG:Ce) and Tb3Al5O12:Ce (TbAG:Ce) single crystalline films, steeply grown, using the…
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Keywords:
epitaxial structures;
three layered;
yag tbag;
converters white ... See more keywords