A V-band Integrated Receiver Front-End Based on 0.15 μm GaAs pHEMT Process for Passive Millimeter-wave Imaging
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3175367
Abstract: The design, analysis, implementation and measurement of an integrated V-band receiver front-end based on 0.15 μm GaAs pHEMT process are presented in this paper. The front-end chip uses the super-heterodyne topology which consists of a… read more here.
Keywords: based gaas; chip; end; end based ... See more keywords
Diode Structures Based on (In, Fe)Sb/GaAs Magnetic Heterojunctions
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DOI: 10.1134/s1063785019070149
Abstract: The current–voltage characteristics of light-emitting diodes based on InGaAs/GaAs heterostructures with an injector made of (In, Fe)Sb diluted magnetic semiconductor are studied. The current–voltage characteristics of the (In, Fe)Sb/n-GaAs and (In, Fe)Sb/p-GaAs structures are analyzed.… read more here.
Keywords: magnetic heterojunctions; structures based; diode structures; based gaas ... See more keywords
Design and optimization of mid-infrared hot electron detector based on Al/GaAs fishnet nanostructure for CO2 sensing.
Sign Up to like & getrecommendations! Published in 2022 at "Applied optics"
DOI: 10.1364/ao.456247
Abstract: Hot electron detectors (HEDs) based on plasmon resonance can circumvent a semiconductor's bandgap limitation and have high sensitivity, suitable for infrared gas detectors. Unfortunately, there are few literature reports on research in the mid-infrared (MIR)… read more here.
Keywords: hot electron; based gaas; mid infrared; gaas fishnet ... See more keywords