Equivalent small-signal model of InP-based HEMTs with accurate radiation effects characterization
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Applied Physics"
DOI: 10.1063/5.0150647
Abstract: In this paper, an effective equivalent modeling technique has been proposed to describe small-signal characteristics of InP-based high electron mobility transistors (HEMTs) after proton radiation, which is composed of an artificial neural network and equivalent-circuit… read more here.
Keywords: based hemts; small signal; inp based; model ... See more keywords
Dose-Rate Dependence of the Total-Ionizing-Dose Response of GaN-Based HEMTs
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DOI: 10.1109/tns.2018.2873059
Abstract: Significant threshold voltage $V_{\mathrm {th}}$ shifts are observed during 10-keV X-ray irradiation of AlGaN/GaN high-electron mobility transistors (HEMTs). Shifts are much smaller for lower dose-rate Cs-137 irradiation than that for higher dose-rate X-ray irradiation. This… read more here.
Keywords: based hemts; tex math; dose rate; rate ... See more keywords
Transmission properties of grating-gate GaN-based HEMTs under different incident angles in the mid-infrared region.
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DOI: 10.1364/oe.477742
Abstract: The absorption tunability of grating-gate GaN-based HEMTs in the mid-infrared region has been confirmed in wide frequency regions. However, the application potential of grating-gate GaN-based HEMTs is limited due to a lack of study on… read more here.
Keywords: grating gate; gan based; based hemts; gate gan ... See more keywords