Comprehensive experimental study of NBνN barrier structures based on n-HgCdTe MBE for detection in MWIR and LWIR spectra
Sign Up to like & getrecommendations! Published in 2023 at "Physica Scripta"
DOI: 10.1088/1402-4896/accf44
Abstract: This work is devoted to a comprehensive experimental study of the electrical and photoelectric characteristics of barrier photosensitive structures in the NBνN configuration based on n-HgCdTe (MCT). Seven different types of photosensitive structures for middle… read more here.
Keywords: mwir; comprehensive experimental; based hgcdte; structures based ... See more keywords
Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Communications Technology and Electronics"
DOI: 10.1134/s1064226919030197
Abstract: The capacitance–voltage (CV) curves of metal–insulator–semiconductor (MIS) systems based on an HgCdTe nBn structure grown by molecular-beam epitaxy on GaAs(013) substrates were studied for the first time in a wide range of frequencies and temperatures.… read more here.
Keywords: insulator semiconductor; hgcdte nbn; metal insulator; systems based ... See more keywords