Memristors Using Solution-Based IGZO Nanoparticles
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DOI: 10.1021/acsomega.7b01167
Abstract: Solution-based indium–gallium–zinc oxide (IGZO) nanoparticles deposited by spin coating have been investigated as a resistive switching layer in metal–insulator–metal structures for nonvolatile memory applications. Optimized devices show a bipolar resistive switching behavior, low programming voltages… read more here.
Keywords: using solution; solution based; based igzo; memristors using ... See more keywords