Effect of traps and defects on high temperature performance of Ge channel junctionless nanowire transistors
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DOI: 10.1063/1.4995415
Abstract: We investigate the effect of traps and defects on high temperature performance of p-type germanium-on-insulator (GOI) based junctionless nanowire transistors (JNTs) at temperatures ranging from 300 to 450 K. Temperature dependence of the main electrical… read more here.
Keywords: effect traps; temperature; based jnts; high temperature ... See more keywords