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Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202209925
Abstract: HfOx‐based memristor has been studied extensively as one of the most promising memories for the excellent nonvolatile data storage and computing‐in‐memory capabilities. However, the resistive switching mechanism, relying on the formation and rupture of conductive…
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Keywords:
conductive filaments;
reconstruction conductive;
based memristor;
hfox based ... See more keywords
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Published in 2021 at "Electrochimica Acta"
DOI: 10.1016/j.electacta.2021.138123
Abstract: Abstract A novel WOx-based memristor with Ti nano-island arrays was developed in this study. A 100 nm thick Pt bottom electrode was deposited, and an ultrathin anodic aluminum oxide (AAO) template was used to obtain…
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Keywords:
island;
wox based;
nano island;
based memristor ... See more keywords
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Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c12247
Abstract: The switching characteristics and performance of oxide-based memristors are predominately determined by oxygen- or oxygen-vacancy-mediated redox reactions and the consequent formation of conducting filaments (CFs). Devices using oxide thin films as the switching layer usually…
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Keywords:
conductance;
highly linear;
conductance modulation;
hfo2 nanorod ... See more keywords
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Published in 2024 at "ACS Applied Materials & Interfaces"
DOI: 10.1021/acsami.4c10687
Abstract: The CeO2-based memristor has attracted significant attention due to its intrinsic resistive switching (RS) properties, large on/off ratio, and great plasticity, making it a promising candidate for artificial synapses. However, significant challenges such as high…
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Keywords:
memristor;
based memristor;
selective conductive;
aligned nanocomposite ... See more keywords
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Published in 2019 at "Nature Electronics"
DOI: 10.1038/s41928-019-0204-7
Abstract: Metal–insulator–metal devices known as memristors offer voltage-regulated nanoscale conductivity and are of interest in the development of non-volatile random access memory. Typically, however, their tunable conductivity is the result of migrating ions within a stochastically…
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Keywords:
metal;
electronic silicon;
purely electronic;
based memristor ... See more keywords
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Published in 2020 at "Nanoscale"
DOI: 10.1039/d0nr02894k
Abstract: Carbon quantum dots (QDs) have attracted significant interest due to their excellent electronic properties and wide application prospects. However, the application of carbon QDs has been rarely reported in memristors. Here, a memristor model with…
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Keywords:
carbon;
associative learning;
carbon based;
memristor ... See more keywords
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Published in 2025 at "Journal of Materials Chemistry C"
DOI: 10.1039/d5tc00406c
Abstract: Memristors can modulate conductance and have multiple levels of storage, which has received great attention in the field of artificial synapses. Due to the disadvantages of low switching ratio, low...
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Keywords:
oxide bilayer;
srtio3 based;
memristor metal;
based memristor ... See more keywords
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Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/abb505
Abstract: THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiO x , which is compatible with silicon-based…
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Keywords:
sio based;
based memristor;
charge;
charge transport ... See more keywords
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Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12132128
Abstract: Multilevel resistive switching in memristive devices is vital for applications in non-volatile memory and neuromorphic computing. In this study, we report on the multilevel resistive switching characteristics in SnSe/SrTiO3(STO) heterojunction-based memory devices with silver (Ag)…
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Keywords:
resistive switching;
based memristor;
snse srtio3;
device ... See more keywords