Three‐Dimensional Reconstruction of Conductive Filaments in HfOx‐Based Memristor
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202209925
Abstract: HfOx‐based memristor has been studied extensively as one of the most promising memories for the excellent nonvolatile data storage and computing‐in‐memory capabilities. However, the resistive switching mechanism, relying on the formation and rupture of conductive… read more here.
Keywords: conductive filaments; reconstruction conductive; based memristor; hfox based ... See more keywords
A novel WOx-based memristor with a Ti nano-island array
Sign Up to like & getrecommendations! Published in 2021 at "Electrochimica Acta"
DOI: 10.1016/j.electacta.2021.138123
Abstract: Abstract A novel WOx-based memristor with Ti nano-island arrays was developed in this study. A 100 nm thick Pt bottom electrode was deposited, and an ultrathin anodic aluminum oxide (AAO) template was used to obtain… read more here.
Keywords: island; wox based; nano island; based memristor ... See more keywords
Surface-Dominated HfO2 Nanorod-Based Memristor Exhibiting Highly Linear and Symmetrical Conductance Modulation for High-Precision Neuromorphic Computing.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c12247
Abstract: The switching characteristics and performance of oxide-based memristors are predominately determined by oxygen- or oxygen-vacancy-mediated redox reactions and the consequent formation of conducting filaments (CFs). Devices using oxide thin films as the switching layer usually… read more here.
Keywords: conductance; highly linear; conductance modulation; hfo2 nanorod ... See more keywords
An electronic silicon-based memristor with a high switching uniformity
Sign Up to like & getrecommendations! Published in 2019 at "Nature Electronics"
DOI: 10.1038/s41928-019-0204-7
Abstract: Metal–insulator–metal devices known as memristors offer voltage-regulated nanoscale conductivity and are of interest in the development of non-volatile random access memory. Typically, however, their tunable conductivity is the result of migrating ions within a stochastically… read more here.
Keywords: metal; electronic silicon; purely electronic; based memristor ... See more keywords
A carbon-based memristor design for associative learning activities and neuromorphic computing.
Sign Up to like & getrecommendations! Published in 2020 at "Nanoscale"
DOI: 10.1039/d0nr02894k
Abstract: Carbon quantum dots (QDs) have attracted significant interest due to their excellent electronic properties and wide application prospects. However, the application of carbon QDs has been rarely reported in memristors. Here, a memristor model with… read more here.
Keywords: carbon; associative learning; carbon based; memristor ... See more keywords
Electronic structure and charge transport mechanism in a forming-free SiO x -based memristor.
Sign Up to like & getrecommendations! Published in 2020 at "Nanotechnology"
DOI: 10.1088/1361-6528/abb505
Abstract: THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiO x , which is compatible with silicon-based… read more here.
Keywords: sio based; based memristor; charge; charge transport ... See more keywords
Multi-Level Resistive Switching in SnSe/SrTiO3 Heterostructure Based Memristor Device
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12132128
Abstract: Multilevel resistive switching in memristive devices is vital for applications in non-volatile memory and neuromorphic computing. In this study, we report on the multilevel resistive switching characteristics in SnSe/SrTiO3(STO) heterojunction-based memory devices with silver (Ag)… read more here.
Keywords: resistive switching; based memristor; snse srtio3; device ... See more keywords