Impedance of MIS Devices Based on nBn Structures from Mercury Cadmium Telluride
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DOI: 10.1007/s11182-020-02117-0
Abstract: Three types of nBn structures based on mercury cadmium telluride grown by molecular beam epitaxy have been fabricated. As barrier layers in nBn structures, Hg1–xCdxTe at x = 0.67 and 0.84 and the 18 period… read more here.
Keywords: mis devices; impedance mis; based nbn; nbn structures ... See more keywords