Transparent (Ni,Au)/ZnO:Al-Based Ohmic Contacts to p-Type GaN as an Insight into the Role of Ni and Au in Standard p-Type GaN Contacts.
Sign Up to like & getrecommendations! Published in 2024 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.4c12850
Abstract: In this work, Ni/ZnO:Al and Au/ZnO:Al structures are proposed as efficient ohmic contacts to p-GaN. Through a careful selection of deposition parameters and annealing environment, we not only achieve the formation of high-quality ohmic contacts… read more here.
Keywords: ohmic contact; type gan; ohmic contacts; based ohmic ... See more keywords
Very low-resistance Mo-based Ohmic contacts to GeTe
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4990407
Abstract: Low-resistance and thermally stable Ohmic contacts are essential for radio frequency switches based on the unique phase change properties of GeTe. Herein, Mo-based Ohmic contacts to p-type GeTe are reported, including the effect of pre-metallization… read more here.
Keywords: contact resistance; resistance based; low resistance; ohmic contacts ... See more keywords
Role of thin Ti layer in formation mechanism of low temperature-annealed Ti/Al-based ohmic contact on AlGaN/GaN heterostructure
Sign Up to like & getrecommendations! Published in 2018 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aac3c3
Abstract: To obtain Ti/Al-based ohmic contacts on AlGaN/GaN heterostructures with a low resistance, it is crucial to understand their formation mechanism. Such a mechanism is still unclear, especially when the annealing temperature is as low as… read more here.
Keywords: formation mechanism; temperature; mechanism; algan gan ... See more keywords
Effect of TiN barrier layer in Cu-based Ohmic contact of AlGaN/GaN High Electron Mobility Transistor
Sign Up to like & getrecommendations! Published in 2023 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/acda56
Abstract: Ti/TiN/Cu is established to be an enabling alternative to the better-known Au-based ohmic contact metals such as Ti/Al/Ni/Au. The Cu-based option delivers lower contact resistance and smoother surface morphology and is proven to be compatible… read more here.
Keywords: based ohmic; algan gan; contact; layer ... See more keywords
Low-Temperature Ta/Al-Based Ohmic Contacts to AlGaN/GaN Heteroepitaxial Structures on Silicon Wafers
Sign Up to like & getrecommendations! Published in 2019 at "Semiconductors"
DOI: 10.1134/s1063782619020064
Abstract: The formation features of a low-temperature Ta/Al-based ohmic contact to Al0.25Ga0.75N/GaN heteroepitaxial structures on silicon substrates are studied. The fabricated ohmic contacts based on Ta/Al/Ti (10/300/20 nm) compositions have a low contact resistance (0.4 Ω… read more here.
Keywords: low temperature; heteroepitaxial structures; temperature based; structures silicon ... See more keywords