Very low-resistance Mo-based Ohmic contacts to GeTe
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DOI: 10.1063/1.4990407
Abstract: Low-resistance and thermally stable Ohmic contacts are essential for radio frequency switches based on the unique phase change properties of GeTe. Herein, Mo-based Ohmic contacts to p-type GeTe are reported, including the effect of pre-metallization… read more here.
Keywords: contact resistance; resistance based; low resistance; ohmic contacts ... See more keywords
Role of thin Ti layer in formation mechanism of low temperature-annealed Ti/Al-based ohmic contact on AlGaN/GaN heterostructure
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DOI: 10.1088/1361-6641/aac3c3
Abstract: To obtain Ti/Al-based ohmic contacts on AlGaN/GaN heterostructures with a low resistance, it is crucial to understand their formation mechanism. Such a mechanism is still unclear, especially when the annealing temperature is as low as… read more here.
Keywords: formation mechanism; temperature; mechanism; algan gan ... See more keywords
Effect of TiN barrier layer in Cu-based Ohmic contact of AlGaN/GaN High Electron Mobility Transistor
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DOI: 10.1088/1361-6641/acda56
Abstract: Ti/TiN/Cu is established to be an enabling alternative to the better-known Au-based ohmic contact metals such as Ti/Al/Ni/Au. The Cu-based option delivers lower contact resistance and smoother surface morphology and is proven to be compatible… read more here.
Keywords: based ohmic; algan gan; contact; layer ... See more keywords
Low-Temperature Ta/Al-Based Ohmic Contacts to AlGaN/GaN Heteroepitaxial Structures on Silicon Wafers
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DOI: 10.1134/s1063782619020064
Abstract: The formation features of a low-temperature Ta/Al-based ohmic contact to Al0.25Ga0.75N/GaN heteroepitaxial structures on silicon substrates are studied. The fabricated ohmic contacts based on Ta/Al/Ti (10/300/20 nm) compositions have a low contact resistance (0.4 Ω… read more here.
Keywords: low temperature; heteroepitaxial structures; temperature based; structures silicon ... See more keywords