Progress of GaN-Based Optoelectronic Devices Integrated with Optical Resonances.
Sign Up to like & getrecommendations! Published in 2022 at "Small"
DOI: 10.1002/smll.202106757
Abstract: Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro… read more here.
Keywords: gan based; based optoelectronic; optical resonances; optoelectronic devices ... See more keywords
Characterization of N-type and P-type Aluminum Antimonides on Si substrates for room-temperature optoelectronic devices
Sign Up to like & getrecommendations! Published in 2018 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2018.08.007
Abstract: Abstract To develop Aluminum Antimonide (AlSb) -based optoelectronic devices on Si substrates, AlSb films were investigated for a good crystalline quality and suitable optical and electrical properties. Under an optimized growth condition by RF-magnetron sputtering… read more here.
Keywords: optoelectronic devices; alsb based; alsb films; based optoelectronic ... See more keywords
Review of Ga2O3-based optoelectronic devices
Sign Up to like & getrecommendations! Published in 2019 at "Materials Today Physics"
DOI: 10.1016/j.mtphys.2019.100157
Abstract: Abstract Gallium oxide (Ga2O3), with an ultrawide-bandgap of ~4.9 eV, has attracted recently much scientific and technological attention due to its extensive future applications in power electronics (field effect transistors, Schottky barrier diodes), optoelectronics (phosphors and… read more here.
Keywords: optoelectronic devices; review ga2o3; based optoelectronic; ga2o3 based ... See more keywords
The large photoresponse and high polarization sensitivity of Te-based optoelectronic devices with the adsorbed hydroxide ions
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0049618
Abstract: The large photogalvanic effect photocurrent is desirable in noncentrosymmetric materials, which may promote practical applications in optoelectronic devices. Here, based on the quantum transport simulations, we propose that the maximum photocurrent of recent attractive Te-based… read more here.
Keywords: based optoelectronic; optoelectronic devices; polarization sensitivity; hydroxide ions ... See more keywords
Multifunctional graphene-based optoelectronic structure based on a Fabry-Perot cavity enhanced by a metallic nanoantenna.
Sign Up to like & getrecommendations! Published in 2022 at "Applied optics"
DOI: 10.1364/ao.471989
Abstract: Optical communications systems are continuously miniaturized to integrate several previously separate optoelectronic devices, organized with silicon-based incorporated circuits, onto a distinct substrate. Modulators and photodetectors have essential roles in photonic systems and operate with different… read more here.
Keywords: graphene; structure; based optoelectronic; optoelectronic structure ... See more keywords
Electrical and optical performance evaluation in solution-process-based optoelectronic devices: theoretical modeling.
Sign Up to like & getrecommendations! Published in 2017 at "Applied optics"
DOI: 10.1364/ao.56.001953
Abstract: This paper presents a computational and semi-analytical approach for theoretical evaluation of solution-process-based optoelectronic devices, such as quantum dot (QD) infrared photodetectors. The dark current and photocurrent for infrared photodetectors are extracted on the basis… read more here.
Keywords: optoelectronic devices; process based; based optoelectronic; solution process ... See more keywords
Simultaneous modulation format identification and OSNR monitoring based on optoelectronic reservoir computing.
Sign Up to like & getrecommendations! Published in 2022 at "Optics express"
DOI: 10.1364/oe.474207
Abstract: An approach for simultaneous modulation format identification (MFI) and optical signal-to-noise ratio (OSNR) monitoring in digital coherent optical communications is proposed based on optoelectronic reservoir computing (RC) and the signal's amplitude histograms (AHs) obtained after… read more here.
Keywords: based optoelectronic; modulation; osnr monitoring; format identification ... See more keywords
Study of material and optical properties of Si x Ge 1-x-y Sn y alloys for Si-based optoelectronic device applications
Sign Up to like & getrecommendations! Published in 2017 at "Optical Materials Express"
DOI: 10.1364/ome.7.003517
Abstract: A series of SiGeSn alloy samples with various Si and Sn compositions and thicknesses were grown on Ge-buffered Si substrates. The growth was conducted by using low-cost commercially available silane and germane precursors in a… read more here.
Keywords: alloys based; properties alloys; optical properties; based optoelectronic ... See more keywords