Interface modification of HfO2-based ReRAM via low temperature anneal
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DOI: 10.1088/1361-6641/ab362a
Abstract: Resistive Random Access Memory (ReRAM) is a novel form of non-volatile memory with a variety of applications ranging from neuromorphic circuits used for artificial intelligence applications, to a potential replacement for flash memory. Each application… read more here.
Keywords: hfo2 based; reram devices; based reram; temperature ... See more keywords