Design of Materials Configuration for Optimizing Redox-based Resistive Switching Memories.
Sign Up to like & getrecommendations! Published in 2021 at "Advanced materials"
DOI: 10.1002/adma.202105022
Abstract: Redox-based resistive random access memories (ReRAM) are based on electrochemical redox processes at the electrode/electrolyte interfaces. The selection of materials and materials combinations strongly influence the related nanoscale interfacial processes, thus playing a crucial role… read more here.
Keywords: materials configuration; redox based; based resistive; resistive switching ... See more keywords
Role of Oxygen Vacancies at the TiO2/HfO2 Interface in Flexible Oxide‐Based Resistive Switching Memory
Sign Up to like & getrecommendations! Published in 2019 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.201800833
Abstract: Flexible memory is highly desirable for data storage in portable wearable electronics. Here, a flexible bilayer TiO2/HfO2‐architecture‐based resistive random access memory (RRAM) is fabricated a on polyethylene naphthalate (PEN) substrate, and exhibits outstanding uniformity, high… read more here.
Keywords: interface; oxygen; memory; tio2 hfo2 ... See more keywords
Self-rectifying resistive switching behavior observed in Al2O3-based resistive switching memory devices with p-AlGaN semiconductor bottom electrode
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2018.01.345
Abstract: Abstract In this work, self-rectifying unipolar resistive switching (RS) behavior is demonstrated in Al2O3-based resistive random access memory (RRAM) devices by employing wide bandgap compound semiconductors, such as p-GaN and p-AlGaN, as a bottom electrode… read more here.
Keywords: resistive switching; al2o3 based; switching behavior; self rectifying ... See more keywords
HfO2-based resistive switching memory with CNTs electrode for high density storage
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.03.004
Abstract: Abstract In this paper, the HfO 2 -based resistive switching memory (RRAM) using carbon nanotubes (CNTs) as contact electrodes for high density integration is demonstrated. The Al/HfO 2 /CNTs devices show self-compliance, forming-free and low… read more here.
Keywords: resistive switching; cnts electrode; high density; based resistive ... See more keywords
Remote control of resistive switching in TiO2 based resistive random access memory device
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-17607-4
Abstract: We report on the magnetic field control of a bipolar resistive switching in Ag/TiO2/FTO based resistive random access memory device through I–V characteristics. Essentially, in the presence of magnetic field and in the low resistance state,… read more here.
Keywords: resistive random; switching tio2; control; based resistive ... See more keywords
A study on mechanism of resistance distribution characteristics of oxide-based resistive memory
Sign Up to like & getrecommendations! Published in 2019 at "Scientific Reports"
DOI: 10.1038/s41598-018-35838-x
Abstract: Although oxide-based resistive switching memory (OxRAM) is one of the strong next-generation high capacity memory candidates, it has the critical disadvantage that deviations of resistance levels is too severe to be adopted as a high… read more here.
Keywords: mechanism; oxide based; study; resistance ... See more keywords
Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)
Sign Up to like & getrecommendations! Published in 2020 at "Scientific Reports"
DOI: 10.1038/s41598-020-68211-y
Abstract: We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on… read more here.
Keywords: switching mode; based resistive; switching memory; resistive switching ... See more keywords
Dynamic conductance characteristics in HfOx-based resistive random access memory
Sign Up to like & getrecommendations! Published in 2017 at "RSC Advances"
DOI: 10.1039/c7ra00567a
Abstract: Characteristics of HfOx-based resistive switching memory (RRAM) in Al/HfOx/Al and Al/AlOx/HfOx/Al structures were studied using a dynamic conductance method. Step-like RESET behaviors as well as pre- and post-RESET regions of operation were characterized. The results… read more here.
Keywords: dynamic conductance; characteristics hfox; hfox based; based resistive ... See more keywords
An intrinsically stretchable and ultrasensitive nanofiber-based resistive pressure sensor for wearable electronics
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Materials Chemistry C"
DOI: 10.1039/d0tc00593b
Abstract: Nanofiber-based electronics with unique fibrous interlocked microstructures are capable of differentiating various mechanical stimuli, such as normal pressure, lateral strain, and bending. Skin-inspired electronics with an ultrahigh sensitivity of 71.07 kPa−1 under a small applied… read more here.
Keywords: ultrasensitive nanofiber; stretchable ultrasensitive; intrinsically stretchable; based resistive ... See more keywords
Correlation between the transport mechanisms in conductive filaments inside Ta 2 O 5 -based resistive switching devices and in substoichiometric TaO x thin films
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5024504
Abstract: Conductive filaments play a key role in redox-based resistive random access memory (ReRAM) devices based on the valence change mechanism, where the change of the resistance is ascribed to the modulation of the oxygen content… read more here.
Keywords: reram devices; thin films; conductive filaments; transport ... See more keywords
Analysis and simulation of the multiple resistive switching modes occurring in HfOx-based resistive random access memories using memdiodes
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Applied Physics"
DOI: 10.1063/1.5094864
Abstract: In this work, analysis and simulation of all experimentally observed switching modes in hafnium oxide based resistive random access memories are carried out using a simplified electrical conduction model. To achieve switching mode variation, two… read more here.
Keywords: resistive random; analysis simulation; switching modes; simulation ... See more keywords