Articles with "based rram" as a keyword



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Ultrafast RESET Analysis of HfOx‐Based RRAM by Sub‐Nanosecond Pulses

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Published in 2017 at "Advanced electronic materials"

DOI: 10.1002/aelm.201700263

Abstract: Ultrafast switching is an attractive performance for resistive random access memory (RRAM) as one of the next-generation nonvolatile memory options. A high-speed measurement setup is designed and constructed to characterize the RESET operation of HfOx-based… read more here.

Keywords: sub nanosecond; hfox based; based rram;
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Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO x -based RRAM devices

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Published in 2023 at "Nanotechnology"

DOI: 10.1088/1361-6528/acc078

Abstract: Y-doping can effectively improve the performance of HfO x -based resistive random-access memory (RRAM) devices, but the underlying physical mechanism of Y-doping affecting the performance of HfO x -based memristors is still missing and unclear.… read more here.

Keywords: rram devices; spectroscopy; hfo based; impedance ... See more keywords
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ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

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Published in 2021 at "IEEE Access"

DOI: 10.1109/access.2021.3098061

Abstract: Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use… read more here.

Keywords: access; memory; zno based; based rram ... See more keywords
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Flexible Parylene C-Based RRAM Array for Neuromorphic Applications

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Published in 2022 at "IEEE Access"

DOI: 10.1109/access.2022.3211956

Abstract: Resistive random-access memory (RRAM) has been explored to implement neuromorphic systems to accelerate neural networks. In this study, an RRAM crossbar array using parylene C (PPXC) as both a resistive switching layer and substrate was… read more here.

Keywords: rram array; array neuromorphic; parylene; based rram ... See more keywords
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Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices

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Published in 2022 at "Materials"

DOI: 10.3390/ma15031205

Abstract: Resistive random access memory (RRAM) has two distinct processes, the SET and RESET processes, that control the formation and dissolution of conductive filament, respectively. The laws of thermodynamics state that these processes correspond to the… read more here.

Keywords: zno based; statistical simulation; simulation switching; heat ... See more keywords
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Effect of Hydrogen Annealing on Performances of BN-Based RRAM

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Published in 2023 at "Nanomaterials"

DOI: 10.3390/nano13101665

Abstract: BN-based resistive random-access memory (RRAM) has emerged as a potential candidate for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity, excellent mechanical, and chemical stability, low power consumption, high density, and reliability. However,… read more here.

Keywords: based rram; annealed based; non annealed; hydrogen annealed ... See more keywords