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Published in 2017 at "Advanced electronic materials"
DOI: 10.1002/aelm.201700263
Abstract: Ultrafast switching is an attractive performance for resistive random access memory (RRAM) as one of the next-generation nonvolatile memory options. A high-speed measurement setup is designed and constructed to characterize the RESET operation of HfOx-based…
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Keywords:
sub nanosecond;
hfox based;
based rram;
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2
Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acc078
Abstract: Y-doping can effectively improve the performance of HfO x -based resistive random-access memory (RRAM) devices, but the underlying physical mechanism of Y-doping affecting the performance of HfO x -based memristors is still missing and unclear.…
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Keywords:
rram devices;
spectroscopy;
hfo based;
impedance ... See more keywords
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0
Published in 2021 at "IEEE Access"
DOI: 10.1109/access.2021.3098061
Abstract: Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use…
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Keywords:
access;
memory;
zno based;
based rram ... See more keywords
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Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3211956
Abstract: Resistive random-access memory (RRAM) has been explored to implement neuromorphic systems to accelerate neural networks. In this study, an RRAM crossbar array using parylene C (PPXC) as both a resistive switching layer and substrate was…
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Keywords:
rram array;
array neuromorphic;
parylene;
based rram ... See more keywords
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1
Published in 2022 at "Materials"
DOI: 10.3390/ma15031205
Abstract: Resistive random access memory (RRAM) has two distinct processes, the SET and RESET processes, that control the formation and dissolution of conductive filament, respectively. The laws of thermodynamics state that these processes correspond to the…
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Keywords:
zno based;
statistical simulation;
simulation switching;
heat ... See more keywords
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3
Published in 2023 at "Nanomaterials"
DOI: 10.3390/nano13101665
Abstract: BN-based resistive random-access memory (RRAM) has emerged as a potential candidate for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity, excellent mechanical, and chemical stability, low power consumption, high density, and reliability. However,…
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Keywords:
based rram;
annealed based;
non annealed;
hydrogen annealed ... See more keywords