Linearity Enhancement in PIN-Diode-Based Switches
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Microwave Theory and Techniques"
DOI: 10.1109/tmtt.2024.3441948
Abstract: In telecommunication systems, like full-duplex transceivers, simultaneous transmission, and reception demand highly linear components to minimize intermodulation interference. PIN-diode-based RF switches used either independently or as part of a device, can introduce nonlinearity in both… read more here.
Keywords: based switches; diode; pin diode; topology ... See more keywords
p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2017.2780120
Abstract: The benefits of using p-n-p silicon–germanium (SiGe) heterojuction bipolar transistors (HBTs) in radio frequency (RF) circuits for the mitigation of single-event transients (SETs) have been investigated. As a representative circuit example, p-n-p SiGe-HBT RF single-pole… read more here.
Keywords: event transients; mitigation single; sige; based switches ... See more keywords