Depletion Mode MOSFET Using La-Doped BaSnO3 as a Channel Material.
Sign Up to like & getrecommendations! Published in 2018 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.8b05229
Abstract: The high room-temperature mobility that can be achieved in BaSnO3 has created significant excitement for its use as channel material in all-perovskite-based transistor devices such as ferroelectric field effect transistor (FET). Here, we report on… read more here.
Keywords: basno3 channel; depletion mode; channel material; doped basno3 ... See more keywords