Robust Memristor based in Epitaxy Vertically Aligned Nanostructured BaTiO3 -CeO2 Films on Silicon.
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DOI: 10.1002/adma.202110343
Abstract: With the exploration of ferroelectric materials, researchers have a strong desire to explore the next generation of non-volatile ferroelectric memory with silicon (Si)-based epitaxy, high density storage and algebraic operations. Here, we report a silicon-based… read more here.
Keywords: vertically aligned; memristor; batio3 ceo2; based epitaxy ... See more keywords