Inductively coupled BCl3/Cl2/Ar plasma etching of Al-rich AlGaN
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DOI: 10.1116/1.4971245
Abstract: Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity… read more here.
Keywords: plasma etching; bias power; inductively coupled; bcl3 cl2 ... See more keywords