Articles with "beam epitaxy" as a keyword



Molecular Beam Epitaxy of Homogeneous Topological HgTe on Doped InAs Substrate

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Published in 2024 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202413229

Abstract: HgTe has been considered to be one of the most versatile topological materials. Depending on the in‐plane strain, Weyl and Dirac semi‐metal, as well as topological insulator phases, are feasible. Here, for the first time… read more here.

Keywords: hgte; beam epitaxy; molecular beam; doped inas ... See more keywords

Off‐Stoichiometry Engineering of the Electrical and Optical Properties of SrNbO3 Using Oxide Molecular Beam Epitaxy

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Published in 2025 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202419990

Abstract: The highly conducting and transparent inorganic perovskites SrBO3 with V, Nb, Mo, and their mixtures at the B‐site have recently attracted the attention of the oxide electronics community as novel alternative transparent conducting oxides. For… read more here.

Keywords: beam epitaxy; engineering; stoichiometry engineering; oxide molecular ... See more keywords

Mitigation of Structural Defects during the Growth of 2D van der Waals Chalcogenides by Molecular Beam Epitaxy.

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Published in 2025 at "Small methods"

DOI: 10.1002/smtd.202501236

Abstract: The growth of wafer‐scale van der Waals (vdW) thin films and heterostructures by molecular beam epitaxy (MBE) is important for future applications in quantum technologies, next‐generation optoelectronic devices, and fundamental physics investigations. When grown using… read more here.

Keywords: van der; beam epitaxy; structural defects; molecular beam ... See more keywords

Trap-assisted high responsivity of a phototransistor using bi-layer MoSe2 grown by molecular beam epitaxy

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Published in 2019 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2019.07.116

Abstract: Abstract The transition metal dichalcogenides (TMDs) have great optical absorption and mobility in a subnanometer thickness. The MoSe2 among TMDs is significantly interested as an active layer in optical devices because it is superior to… read more here.

Keywords: layer mose2; molecular beam; beam epitaxy; using layer ... See more keywords

Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1-xBix thin films

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Published in 2018 at "Journal of Alloys and Compounds"

DOI: 10.1016/j.jallcom.2018.01.329

Abstract: Epitaxial growth of GaSb 1–x Bi x thin films on GaSb (100) substrates were studied by varying V/III ratio, growth temperatures and Bi flux using molecular beam epitaxy. It is demonstrated that reducing the V/III… read more here.

Keywords: thin films; gasb; content; molecular beam ... See more keywords

GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y 2 O 3 - In comparison with atomic layer deposited Al 2 O 3

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Published in 2017 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2016.11.118

Abstract: Abstract In-situ molecular beam epitaxy (MBE) Y 2 O 3 films 1–2 nm thick were epitaxially grown on GaAs(001)−4×6 reconstructed surfaces. Despite a large lattice mismatch, the hetero-structure exhibits outstanding thermal stability to 900 °C with excellent… read more here.

Keywords: atomic layer; gaas; layer deposited; molecular beam ... See more keywords

Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy

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Published in 2017 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2017.04.013

Abstract: Abstract We investigate monocrystalline InAs nanowires (NWs) which are grown catalyst assisted by molecular beam epitaxy (MBE) and create the catalyst by focused ion beam (FIB) implanted Au spots. With this combination of methods an… read more here.

Keywords: inas nanowires; molecular beam; focused ion; beam epitaxy ... See more keywords

Doping control of GaAsPN alloys by molecular beam epitaxy for monolithic III-V/Si tandem solar cells

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Published in 2017 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2017.05.025

Abstract: Abstract This paper presents intentional doping of n - and p -type GaAs 0.19 P 0.76 N 0.05 alloys by molecular beam epitaxy, followed by rapid thermal annealing (RTA). Sulfur and magnesium were respectively used… read more here.

Keywords: alloys molecular; gaaspn alloys; molecular beam; type ... See more keywords

Molecular beam epitaxy and characterization of Al0.6Ga0.4N epilayers

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Published in 2019 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2018.10.048

Abstract: Abstract We have performed a detailed investigation of the molecular beam epitaxy of AlGaN epilayers on AlN template on sapphire substrate. The effects of various growth parameters, including nitrogen flow rate, and Al and Ga… read more here.

Keywords: molecular beam; epitaxy characterization; al0 6ga0; beam epitaxy ... See more keywords

Molecular beam epitaxy growth of GaN films on a tungsten carbide/Si template

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Published in 2018 at "Thin Solid Films"

DOI: 10.1016/j.tsf.2018.01.057

Abstract: Abstract This study examined the growth of GaN layers by molecular beam epitaxy (MBE) using a tungsten carbide (WC) buffer sputtered on a Si(111) surface. The chemical stability of the WC layer against the Ga-Si… read more here.

Keywords: growth gan; molecular beam; beam epitaxy; growth ... See more keywords

Elastic modulus and hardness of cubic GaN grown by molecular beam epitaxy obtained by nanoindentation

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Published in 2020 at "Thin Solid Films"

DOI: 10.1016/j.tsf.2020.137915

Abstract: Abstract The mechanical properties of gallium nitride thin films in the cubic phase (c-GaN) measured by Berkovich nanoindentation are reported here. The c-GaN thin films were grown on MgO (100) substrates by plasma-assisted molecular beam… read more here.

Keywords: cubic gan; beam epitaxy; molecular beam; nanoindentation ... See more keywords