Articles with "beam epitaxy" as a keyword



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Trap-assisted high responsivity of a phototransistor using bi-layer MoSe2 grown by molecular beam epitaxy

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Published in 2019 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2019.07.116

Abstract: Abstract The transition metal dichalcogenides (TMDs) have great optical absorption and mobility in a subnanometer thickness. The MoSe2 among TMDs is significantly interested as an active layer in optical devices because it is superior to… read more here.

Keywords: layer mose2; molecular beam; beam epitaxy; using layer ... See more keywords
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Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1-xBix thin films

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Published in 2018 at "Journal of Alloys and Compounds"

DOI: 10.1016/j.jallcom.2018.01.329

Abstract: Epitaxial growth of GaSb 1–x Bi x thin films on GaSb (100) substrates were studied by varying V/III ratio, growth temperatures and Bi flux using molecular beam epitaxy. It is demonstrated that reducing the V/III… read more here.

Keywords: thin films; gasb; content; molecular beam ... See more keywords
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GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y 2 O 3 - In comparison with atomic layer deposited Al 2 O 3

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Published in 2017 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2016.11.118

Abstract: Abstract In-situ molecular beam epitaxy (MBE) Y 2 O 3 films 1–2 nm thick were epitaxially grown on GaAs(001)−4×6 reconstructed surfaces. Despite a large lattice mismatch, the hetero-structure exhibits outstanding thermal stability to 900 °C with excellent… read more here.

Keywords: atomic layer; gaas; layer deposited; molecular beam ... See more keywords
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Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy

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Published in 2017 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2017.04.013

Abstract: Abstract We investigate monocrystalline InAs nanowires (NWs) which are grown catalyst assisted by molecular beam epitaxy (MBE) and create the catalyst by focused ion beam (FIB) implanted Au spots. With this combination of methods an… read more here.

Keywords: inas nanowires; molecular beam; focused ion; beam epitaxy ... See more keywords
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Doping control of GaAsPN alloys by molecular beam epitaxy for monolithic III-V/Si tandem solar cells

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Published in 2017 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2017.05.025

Abstract: Abstract This paper presents intentional doping of n - and p -type GaAs 0.19 P 0.76 N 0.05 alloys by molecular beam epitaxy, followed by rapid thermal annealing (RTA). Sulfur and magnesium were respectively used… read more here.

Keywords: alloys molecular; gaaspn alloys; molecular beam; type ... See more keywords
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Molecular beam epitaxy and characterization of Al0.6Ga0.4N epilayers

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Published in 2019 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2018.10.048

Abstract: Abstract We have performed a detailed investigation of the molecular beam epitaxy of AlGaN epilayers on AlN template on sapphire substrate. The effects of various growth parameters, including nitrogen flow rate, and Al and Ga… read more here.

Keywords: molecular beam; epitaxy characterization; al0 6ga0; beam epitaxy ... See more keywords
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Molecular beam epitaxy growth of GaN films on a tungsten carbide/Si template

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Published in 2018 at "Thin Solid Films"

DOI: 10.1016/j.tsf.2018.01.057

Abstract: Abstract This study examined the growth of GaN layers by molecular beam epitaxy (MBE) using a tungsten carbide (WC) buffer sputtered on a Si(111) surface. The chemical stability of the WC layer against the Ga-Si… read more here.

Keywords: growth gan; molecular beam; beam epitaxy; growth ... See more keywords
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Elastic modulus and hardness of cubic GaN grown by molecular beam epitaxy obtained by nanoindentation

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Published in 2020 at "Thin Solid Films"

DOI: 10.1016/j.tsf.2020.137915

Abstract: Abstract The mechanical properties of gallium nitride thin films in the cubic phase (c-GaN) measured by Berkovich nanoindentation are reported here. The c-GaN thin films were grown on MgO (100) substrates by plasma-assisted molecular beam… read more here.

Keywords: cubic gan; beam epitaxy; molecular beam; nanoindentation ... See more keywords
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Adatom-Driven Oxygen Intermixing during the Deposition of Oxide Thin Films by Molecular Beam Epitaxy.

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Published in 2022 at "Nano letters"

DOI: 10.1021/acs.nanolett.2c01678

Abstract: Thin film deposition from the vapor phase is a complex process involving adatom adsorption, movement, and incorporation into the growing film. Here, we present quantitative experimental data that reveals anion intermixing over long length scales… read more here.

Keywords: molecular beam; deposition; film; beam epitaxy ... See more keywords
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Molecular Beam Epitaxy of Two-Dimensional Vanadium-Molybdenum Diselenide Alloys.

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Published in 2020 at "ACS nano"

DOI: 10.1021/acsnano.0c02124

Abstract: Two-dimensional (2D) alloys represent a versatile platform that extends the properties of atomically thin transition-metal dichalcogenides. Here, using molecular beam epitaxy (MBE), we investigate the growth of 2D vanadium-molybdenum diselenide alloys, VxMo1-xSe2, on highly oriented… read more here.

Keywords: vanadium molybdenum; two dimensional; molecular beam; spectroscopy ... See more keywords
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Measuring and Then Eliminating Twin Domains in SnSe Thin Films Using Fast Optical Metrology and Molecular Beam Epitaxy.

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Published in 2022 at "ACS nano"

DOI: 10.1021/acsnano.2c02459

Abstract: van der Waals (vdW) layered chalcogenides have strongly direction-dependent (i.e., anisotropic) properties that make them interesting for photonic and optoelectronic applications. Orthorhombic tin selenide (α-SnSe) is a triaxial vdW material with strong optical anisotropy within… read more here.

Keywords: snse thin; fast optical; molecular beam; thin films ... See more keywords