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Published in 2017 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2017.03.003
Abstract: Abstract Focused ion beam implantation was used for the formation of Ga droplets which act as nucleation points for self-catalyzed, molecular beam epitaxy-grown nanowires on Si(111). In order to further optimize the growth, the substrate…
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Keywords:
beam implantation;
ion beam;
focused ion;
implantation ... See more keywords