Influence of Se beam pressure on deep-level defects in Cu(In,Ga)Se 2 thin films studied by photocapacitance and time-resolved photoluminescence measurements
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DOI: 10.1364/ao.56.001291
Abstract: The properties of deep-level defects in Cu(In,Ga)Se2 thin films grown under different Se beam pressure were investigated by photocapacitance (PC) and time-resolved photoluminescence (TRPL) measurements. A generally known deep-level defect located at around 0.8 eV above… read more here.
Keywords: photocapacitance; pressure; beam pressure; deep level ... See more keywords