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Published in 2017 at "AIP Advances"
DOI: 10.1063/1.4989884
Abstract: We report structural properties as well as electrical and optical behaviors of beryllium (Be)-doped InGaAsP lattice-matched to InP grown by gas source molecular beam epitaxy. P type layers present a high degree of compensation on…
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Keywords:
gas source;
compensation;
grown gas;
source molecular ... See more keywords