Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film
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DOI: 10.1186/s11671-022-03655-x
Abstract: We demonstrate a non-volatile field-effect transistor (NVFET) with a 3-nm amorphous HfO 2 dielectric that can simulate the synaptic functions under the difference and repetition of gate voltage ( V G ) pulses. Under 100 ns… read more here.
Keywords: synaptic behaviors; field; field effect; behaviors ferroelectric ... See more keywords