Noise behaviour of δp+ Si1−xGex layer SELBOX TFET
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DOI: 10.1007/s12648-019-01485-9
Abstract: AbstractThis paper explores an analysis of low- and high-frequency noise in a heterojunction, selective buried oxide (SELBOX) with high-k gate dielectric TFET. The electrical parameters for different doping concentrations, δp+ layer width and mole fractions… read more here.
Keywords: spectral density; selbox; noise behaviour; si1 xgex ... See more keywords