Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy
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DOI: 10.1088/1361-6463/ac3457
Abstract: The effects of Si doping well beyond the Mott transition limit on the structural, electrical, and optical properties of plasma assisted molecular beam epitaxy grown GaN layers were studied. Si doping up to a doping… read more here.
Keywords: doping well; transition limit; mott transition; beyond mott ... See more keywords