Articles with "bi2o2se" as a keyword



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Sensitive and Ultrabroadband Phototransistor Based on Two‐Dimensional Bi2O2Se Nanosheets

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Published in 2019 at "Advanced Functional Materials"

DOI: 10.1002/adfm.201905806

Abstract: Bi2O2Se, a high‐mobility and air‐stable 2D material, has attracted substantial attention for application in integrated logic electronics and optoelectronics. However, achieving an overall high performance over a wide spectral range for Bi2O2Se‐based devices remains a… read more here.

Keywords: bi2o2se nanosheets; bi2o2se; sensitive ultrabroadband; ultrabroadband phototransistor ... See more keywords
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Progress Report on Property, Preparation, and Application of Bi 2 O 2 Se

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Published in 2020 at "Advanced Functional Materials"

DOI: 10.1002/adfm.202004480

Abstract: The study of 2D materials has been a significant and fascinating area, at least since the discovery of graphene. As one of the layered bismuth oxychalcogenides, bismuth oxyselenide (Bi2O2Se) has drawn a lot of attention… read more here.

Keywords: progress report; report property; report; bi2o2se ... See more keywords
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Electrically Switchable Polarization in Bi2O2Se Ferroelectric Semiconductors

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Published in 2023 at "Advanced Materials"

DOI: 10.1002/adma.202210854

Abstract: Atomically 2D layered ferroelectric semiconductors, in which the polarization switching process occurs within the channel material itself, offer a new material platform that can drive electronic components toward structural simplification and high‐density integration. Here, a… read more here.

Keywords: ferroelectric semiconductors; electrically switchable; bi2o2se; switchable polarization ... See more keywords
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Sub 10 nm Bilayer Bi 2 O 2 Se Transistors

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Published in 2019 at "Advanced Electronic Materials"

DOI: 10.1002/aelm.201800720

Abstract: DOI: 10.1002/aelm.201800720 quest in the next decade.[1–4] However, Moore’s law has approached its physical limit because silicon FETs scaling down to 10 nm gate length especially for the sub 5 nm node is difficult to… read more here.

Keywords: limit; channel; carrier mobility; performance ... See more keywords
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The influence of Ca doping in Bi2O2Se: A first-principles investigation

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Published in 2020 at "Computational Materials Science"

DOI: 10.1016/j.commatsci.2020.109684

Abstract: Abstract Bi2O2Se, as a member of bismuth oxychalcogenides, is regarded as a promising candidate for optoelectronic applications, such as phototransistors, photodetectors, pulsed lasers and photodiodes. Throughout the research progress of Bi2O2Se, the crystal quality of… read more here.

Keywords: influence doping; doping bi2o2se; bi2o2se first; bi2o2se ... See more keywords
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Electronic and mechanical property of high electron mobility semiconductor Bi2O2Se

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Published in 2018 at "Journal of Alloys and Compounds"

DOI: 10.1016/j.jallcom.2018.06.120

Abstract: Abstract Using first-principles calculations combined with a semi-empirical van der Waals dispersion correction, we have investigated the structural, electronic and mechanical properties of Bi2O2Se. We predict that Bi2O2Se is a semiconductor with a band gap… read more here.

Keywords: electronic mechanical; semiconductor; high electron; property high ... See more keywords
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Defect Engineering in Thickness-Controlled Bi2O2Se-Based Transistors by Argon Plasma Treatment.

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Published in 2022 at "ACS applied materials & interfaces"

DOI: 10.1021/acsami.1c24260

Abstract: We present a simple, effective, and controllable method to uniformly thin down the thickness of as-exfoliated two-dimensional Bi2O2Se nanoflakes using Ar+ plasma treatment. Atomic force microscopy (AFM) images and Raman spectra indicate that the surface… read more here.

Keywords: thickness controlled; plasma treatment; bi2o2se; treatment ... See more keywords
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Lithium nitrate-assisted hydrothermal synthesis of ultrathin Bi2O2Se nanosheets and their photoelectrochemical performance

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Published in 2020 at "Journal of Materials Chemistry C"

DOI: 10.1039/d0tc04352d

Abstract: Two-dimensional Bi2O2Se has drawn a lot of attention recently, due to its ultrahigh mobility and excellent performance in electronics and optoelectronics. However, the facile synthesis of two-dimensional Bi2O2Se nanocrystals is urgently required for their fundamental… read more here.

Keywords: ultrathin bi2o2se; lithium nitrate; bi2o2se nanosheets; performance ... See more keywords
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Room Temperature Exciton Formation and Robust Optical Properties of CVD-Grown Ultrathin Bi2O2Se Crystals on Arbitrary Substrates

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Published in 2023 at "Nanoscale"

DOI: 10.1039/d3nr01201h

Abstract: The appealing success of non-van der Waals (Non-VdW) two-dimensional (2D) Bismuth oxiselenise (Bi2O2Se) crystals in optoelectronics provides an exciting avenue to investigate its fundamental physical properties. To date, the majority... read more here.

Keywords: bi2o2se crystals; formation robust; temperature exciton; bi2o2se ... See more keywords
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Strain-tunable electronic structure, optical response, and high electron mobility of Bi2O2Se crystals

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Published in 2019 at "APL Materials"

DOI: 10.1063/1.5108853

Abstract: Newly fabricated semiconductor Bi2O2Se films exhibit excellent electron transport and optical properties, with potential application in optoelectronics. In this work, using first-principle calculations combined with the modified Becke-Johnson exchange potential, we have systematically investigated the… read more here.

Keywords: mobility; bi2o2se; optical response; electron mobility ... See more keywords
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Thermal transport and energy dissipation in two-dimensional Bi2O2Se

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Published in 2019 at "Applied Physics Letters"

DOI: 10.1063/1.5123682

Abstract: Thermal transport and energy dissipation are important for a material in both thermoelectric and electronic devices. Here, we investigate the lateral and interfacial thermal transport of two-dimensional (2D) Bi2O2Se by Raman spectroscopy. It is found… read more here.

Keywords: interfacial thermal; transport; thermal transport; thermal conductivity ... See more keywords