Hysteresis Effect in Two‐Dimensional Bi2Te3 Nanoplate Field‐Effect Transistors
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202000851
Abstract: Recently, field‐effect transistors (FETs) based on two‐dimensional (2D) Bi2Te3 nanoplates have attracted much attention due to their great potential for fabricating high‐performance electronic devices. However, the gating property measurement of the Bi2Te3 nanoplate FETs exhibits… read more here.
Keywords: bi2te3; field effect; performance; bi2te3 nanoplate ... See more keywords