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Published in 2017 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-017-7089-x
Abstract: Bi3.15La0.85Ti3O12 (BLT) thin films grown on LaNiO3 (LNO) buffered Si (100) substrates were prepared by chemical solution deposition. The samples were annealed at 600 °C by rapid thermal annealing in oxygen and nitrogen atmosphere, respectively. X-ray…
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Keywords:
bi3 15la0;
thin films;
chemical solution;
15la0 85ti3o12 ... See more keywords