Numerical study on the suppression of 4H-SiC PiN diodes forward bias degradation due to substrate basal plane dislocations
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DOI: 10.1016/j.sse.2020.107770
Abstract: Abstract We propose a calculation model of current density that causes forward bias degradation from substrate basal plane dislocations (BPDs) in 4H-SiC PiN diodes. The hole concentration above which substrate BPDs expand to single Shockley… read more here.
Keywords: sic pin; forward bias; bias degradation; pin diodes ... See more keywords