Improving OFF‐State Bias‐Stress Stability in High‐Mobility Conjugated Polymer Transistors with an Antisolvent Treatment
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202205377
Abstract: Conjugated polymer field‐effect transistors are emerging as an enabling technology for flexible electronics due to their excellent mechanical properties combined with sufficiently high charge‐carrier mobilities and compatibility with large‐area, low‐temperature processing. However, their electrical stability… read more here.
Keywords: stability; bias stress; state; conjugated polymer ... See more keywords
Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.10.022
Abstract: Abstract We propose a universal model for bias-stress (BS)-induced instability in the inkjet-printed carbon nanotube (CNT) networks used in field-effect transistors (FETs). By combining two experimental methods, i.e., a comparison between air and vacuum BS… read more here.
Keywords: universal model; model bias; bias stress; stress induced ... See more keywords
Stability of zinc nitride thin-film transistors under positive and negative bias stress
Sign Up to like & getrecommendations! Published in 2020 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2020.107841
Abstract: Abstract In this work, the electrical stability of zinc nitride (Zn3N2) Thin-film Transistors (TFTs) under negative bias stress (NBS) and positive bias stress (PBS) is presented. The Zn3N2 TFTs were fabricated on plastic substrates. Spin-on… read more here.
Keywords: zinc nitride; thin film; bias stress; stress ... See more keywords
Gate Bias Stress Instability and Hysteresis Characteristics of InAs Nanowire Field-Effect Transistors.
Sign Up to like & getrecommendations! Published in 2020 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c17317
Abstract: Because of the excellent electrical properties, III-V semiconductor nanowires are promising building blocks for next-generation electronics; however, their rich surface states inevitably contribute large amounts of charge traps, leading to gate bias stress instability and… read more here.
Keywords: stress instability; gate bias; hysteresis; bias stress ... See more keywords
Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14040842
Abstract: In this work, an electrical stability model based on surface potential is presented for amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) under positive-gate-bias stress (PBS) and light stress. In this model, the sub-gap density of… read more here.
Keywords: stress; tfts positive; surface potential; bias stress ... See more keywords