Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202401170
Abstract: A low‐thermal‐budget fabrication approach is developed to realize high‐performance fluorine‐doped indium oxide (In2O3:F) thin‐film transistors (TFTs) with remarkable bias‐stress stability. The ultrathin transistor channel layer is prepared by a re‐developed atomic layer deposition (ALD) process… read more here.
Keywords: layer; bias stress; stress stability; remarkable bias ... See more keywords
Improving OFF‐State Bias‐Stress Stability in High‐Mobility Conjugated Polymer Transistors with an Antisolvent Treatment
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202205377
Abstract: Conjugated polymer field‐effect transistors are emerging as an enabling technology for flexible electronics due to their excellent mechanical properties combined with sufficiently high charge‐carrier mobilities and compatibility with large‐area, low‐temperature processing. However, their electrical stability… read more here.
Keywords: stability; bias stress; state; conjugated polymer ... See more keywords
Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.10.022
Abstract: Abstract We propose a universal model for bias-stress (BS)-induced instability in the inkjet-printed carbon nanotube (CNT) networks used in field-effect transistors (FETs). By combining two experimental methods, i.e., a comparison between air and vacuum BS… read more here.
Keywords: universal model; model bias; bias stress; stress induced ... See more keywords
Stability of zinc nitride thin-film transistors under positive and negative bias stress
Sign Up to like & getrecommendations! Published in 2020 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2020.107841
Abstract: Abstract In this work, the electrical stability of zinc nitride (Zn3N2) Thin-film Transistors (TFTs) under negative bias stress (NBS) and positive bias stress (PBS) is presented. The Zn3N2 TFTs were fabricated on plastic substrates. Spin-on… read more here.
Keywords: zinc nitride; thin film; bias stress; stress ... See more keywords
Gate Bias Stress Instability and Hysteresis Characteristics of InAs Nanowire Field-Effect Transistors.
Sign Up to like & getrecommendations! Published in 2020 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c17317
Abstract: Because of the excellent electrical properties, III-V semiconductor nanowires are promising building blocks for next-generation electronics; however, their rich surface states inevitably contribute large amounts of charge traps, leading to gate bias stress instability and… read more here.
Keywords: stress instability; gate bias; hysteresis; bias stress ... See more keywords
Reliability analysis under bias stress and elevated temperature of dual-gate IGZO TFT
Sign Up to like & getrecommendations! Published in 2024 at "AIP Advances"
DOI: 10.1063/5.0232559
Abstract: Indium–gallium–zinc oxide (IGZO) as a star material has been broadly applied in multiple functional devices, including planar displays, flexible electronic devices, and photoelectronics. In recent years, the development of artificial intelligence and great data also… read more here.
Keywords: bias stress; dual gate; igzo; igzo tft ... See more keywords
Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress
Sign Up to like & getrecommendations! Published in 2024 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ad1b15
Abstract: Amorphous InGaZnO (a-IGZO) has attracted a lot of attention as a high-mobility channel material for thin film transistors (TFTs). However, the instability mechanism involving threshold voltage and subthreshold swing (SS) in a-IGZO TFTs still requires… read more here.
Keywords: threshold voltage; bias stress; amorphous ingazno;
Regulation NO and NH₃ Sensing of Organic Transistors via Synergy of Bias-Stress Effect and Photoexcitation
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2024.3368143
Abstract: Bias-stress effect causing undesirable charge trapping and performance degradation are considered huge obstacles for high-performance organic transistors. Besides the extra effort to suppress it, it is innovative to use the synergy of bias-stress effect and… read more here.
Keywords: stress effect; bias stress; bias; photoexcitation ... See more keywords
Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14040842
Abstract: In this work, an electrical stability model based on surface potential is presented for amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) under positive-gate-bias stress (PBS) and light stress. In this model, the sub-gap density of… read more here.
Keywords: stress; tfts positive; surface potential; bias stress ... See more keywords