Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface quality and bias temperature instability of 4H-SiC MOS capacitors
Sign Up to like & getrecommendations! Published in 2020 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.145837
Abstract: Abstract Interface properties and bias temperature instability (BTI) determine the performance and stability of SiC metal-oxide semiconductor (MOS) devices. In this work, we propose an electron cyclotron resonance microwave nitrogen–oxygen (N O) mixed plasma post-oxidation… read more here.
Keywords: plasma; bias temperature; spectroscopy; interface ... See more keywords
Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.06.003
Abstract: Abstract Bias temperature instability (BTI) is one of the critical device degradation mechanisms in poly-Si/SiON and metal gate/high- k complementary metal-oxide-semiconductor (CMOS) technologies. Using the pre- and post-BTI flicker noise measurements, we investigated the bulk… read more here.
Keywords: bias temperature; noise; sion; mghk mosfets ... See more keywords
Reverse-Bias and Temperature Behaviors of Perovskite Solar Cells at Extended Voltage Range
Sign Up to like & getrecommendations! Published in 2022 at "ACS Applied Energy Materials"
DOI: 10.1021/acsaem.1c03206
Abstract: Perovskite solar cells have reached certified power conversion efficiency over 25%, enabling the realization of efficient large-area modules and even solar farms. It is therefore essential to deal with technical aspects, including the reverse-bias operation… read more here.
Keywords: bias temperature; solar cells; perovskite solar; reverse bias ... See more keywords
Investigation of degradation mechanism after negative bias temperature stress in Si/SiGe channel metal–oxide–semiconductor capacitors induced by hydrogen diffusion
Sign Up to like & getrecommendations! Published in 2021 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ac3dd5
Abstract: In this research, based on I–V and C–V measurement at different temperatures, the interface defect density in the device with the Si/SiGe channel was discussed. In addition, negative bias temperature instability (NBTI) is also studied.… read more here.
Keywords: bias temperature; negative bias; sige channel; stress ... See more keywords
Investigation of Negative Bias Temperature Instability Effect in Partially Depleted SOI pMOSFET
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Access"
DOI: 10.1109/access.2020.2997463
Abstract: The negative bias temperature instability (NBTI) mechanisms for Core and input/output (I/O) devices from a 130 nm partially-depleted silicon on insulator (PDSOI) technology are investigated. The I/O device degrades more than the Core device under… read more here.
Keywords: temperature instability; gate; bias temperature; negative bias ... See more keywords
Impact of Dimensions of Memory Periphery FinFETs on Bias Temperature Instability
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2020.2984957
Abstract: Fin height and width dependence of negative and positive Bias Temperature Instability (N/PBTI) on logic for memory high- $\kappa $ metal gate (HKMG) FinFET transistors is reported for the first time. It was observed that… read more here.
Keywords: temperature instability; impact; fin; inline formula ... See more keywords
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics—Part I: Experimental
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2873419
Abstract: Bias temperature instability (BTI) and hot-carrier degradation (HCD) are among the most important reliability issues but are typically studied independently in an idealized setting. However, even though it is well understood that mixed BTI/HC degradation… read more here.
Keywords: temperature instability; hot carrier; impact mixed; stress ... See more keywords
Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Industry Applications"
DOI: 10.1109/tia.2020.3045120
Abstract: Junction temperature sensing is an integral part of both online and offline condition monitoring where direct access to the bare die surface is not available. Given a defined power input, the junction temperature enables the… read more here.
Keywords: temperature instability; electrical parameters; temperature; junction temperature ... See more keywords
Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13050808
Abstract: The Negative Bias Temperature Instability (NBTI) effect of partially depleted silicon-on-insulator (PDSOI) PMOSFET based on 130 nm is investigated. First, the effect of NBTI on the IV characteristics and parameter degradation of T-Gate PDSOI PMOSFET… read more here.
Keywords: pdsoi pmosfet; bias temperature; effect;