A 30% Efficient High-Output Voltage Fully Integrated Self-Biased Gate RF Rectifier Topology for Neural Implants
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DOI: 10.1109/jssc.2022.3180633
Abstract: This article presents a fully integrated RF energy harvester (EH) with 30% end-to-end power harvesting efficiency (PHE) and supports high-output voltage operation, up to 9.3 V, with a 1.07-GHz input and under the electrode model… read more here.
Keywords: topology; self biased; fully integrated; high output ... See more keywords