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Published in 2017 at "Optical and Quantum Electronics"
DOI: 10.1007/s11082-017-1258-2
Abstract: Dark current transport mechanism associated with acceptor concentration in GaAs-based blocked-impurity-band (BIB) detectors has been investigated. Device structure, numerical models and simulation techniques are described in detail. By careful model and parameter calibration, the numerical…
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Keywords:
bib detectors;
gaas based;
acceptor concentration;
transport ... See more keywords