Ag:SiO xN y-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application.
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DOI: 10.1021/acsami.8b12385
Abstract: We fabricate a Pt/Ag:SiO xN y/Ti programmable metallization cell exhibiting bidirectional threshold switching (TS) or nonvolatile resistive switching (RS) characteristics through a simple thermal annealing process. The cell composed of pristine Ag:SiO xN y layers… read more here.
Keywords: sio based; threshold switching; switching characteristics; self limiting ... See more keywords