Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In–Ga–Zn–O bilayer channel configuration
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DOI: 10.1088/1361-6528/acb3cc
Abstract: Vertical channel thin film transistors (VTFTs) have been expected to be exploited as one of the promising three-dimensional devices demanding a higher integration density owing to their structural advantages such as small device footprints. However,… read more here.
Keywords: configuration; bilayer channel; vertical channel; device ... See more keywords